Gate metal patterning to avoid gate stack attack due to excessive wet etching

ABSTRACT

A method of forming gate structures to a nanosheet device that includes forming at least two stacks of nanosheets, wherein each nanosheet includes a channel region portion having a gate dielectric layer present thereon. The method may further include forming a dual metal layer scheme on the gate dielectric layer of each nanosheet. The dual metal layer scheme including an etch stop layer of a first composition and a work function adjusting layer of a second composition, wherein the etch stop layer has a composition that provides that the work function adjusting layer is removable by a wet etch chemistry that is selective to the etch stop layer.

BACKGROUND Technical Field

The present disclosure relates to semiconductor devices, and moreparticularly to semiconductor devices including channel regionsintegrated within nano-sheets.

Description of the Related Art

With the continuing trend towards miniaturization of integrated circuits(ICs), there is a need for transistors to have higher drive currentswith increasingly smaller dimensions. The use of non-planarsemiconductor devices such as, for example, nanowire and nano-sheettransistors may be the next step in the evolution of complementary metaloxide semiconductor (CMOS) devices.

SUMMARY

In one embodiment, the present disclosure provides a suspended channelfield effect transistor (FET), i.e., nanosheet. The method may includeforming at least two stacks of nanosheets, wherein each nanosheet ineach of said at least two stacks of nanosheets includes a gatedielectric layer present on a channel region portion of each nanosheet.The method may further include forming a dual metal layer scheme on thegate dielectric layer of each nano sheet, the dual metal layer schemecomprising an etch stop layer of a first composition and a work functionadjusting layer of a second composition, wherein the etch stop layer hasa composition that provides that the work function adjusting layer isremovable by a wet etch chemistry that is selective to the etch stoplayer.

In another embodiment of the present disclosure, a method is providedfor producing nanosheet semiconductor devices having differentconductivity types on a same semiconductor substrate, e.g., in acomplementary metal oxide semiconductor (CMOS) arrangement. In oneembodiment, the method includes forming a first stack of suspendednanosheets on a first region of a substrate, and forming a second stackof suspended nanosheets on a second region of the substrate. A gatedielectric is then formed on a channel region of each nanosheet of thefirst stack of suspended nanosheets and the second stack of suspendednanosheets. A dual metal layer scheme is formed on the gate dielectriclayer of each nanosheet, the dual metal layer scheme comprising an etchstop layer of a first composition and a work function adjusting layer ofa second composition, wherein the etch stop layer has a composition thatprovides that the work function adjusting layer is removable by a wetetch chemistry that is selective to the etch stop layer. The method maycontinue with removing the work function adjusting layer from the secondstack of suspended nanosheets in the second region of the substrate,while the work function adjusting layer remains on the first stack ofsuspended nanosheets. The work function adjusting layer is removed fromthe second stack of suspended nanosheets by a wet chemical etch that isselective to the etch stop layer. The etch stop layer allows for anentirety of the work function adjusting layer to be removed from thesecond stack of the suspended nanosheets by protecting the underlyinggate dielectric on at least the edges and upper sheet surface of thechannel region of the nanosheets. In a following process step, a gateconductor is formed to each of the first and second stacks of suspendednanosheets providing a functional gate structure for a firstconductivity type device including the first stack of suspendednanosheets and a second conductivity type device including the secondstack of suspended nanosheets.

In another aspect, an electrical device is provided including twodifferent conductivity type, i.e., n-type or p-type conductivity,semiconductor devices including suspended nanosheet channel regions thatare both present on the same supporting substrate. In one embodiment,the electrical device includes a first stack of suspended nanosheets ina first region of a substrate containing first conductivity typenanosheet devices; and a second stack of suspended nanosheets in asecond region of the substrate including second conductivity typenanosheet devices. The channel region for each of the first and secondstack of suspended nanosheets includes a high-k gate dielectric having asubstantially conformal thickness around an entirety of each nanosheetin the first and second stack of suspended nanosheets, and having edgesthat are free of etch damages or etch residue. An etch stop layer of afirst metal nitride is present on the gate dielectric for each of saidnanosheet of said first stack of suspended nanosheets. At least one ofthe first and second stacks of suspended nanosheets includes a workfunction adjusting metal containing layer, wherein the work functionadjusting metal containing layer in the first stack is present on theetch stop layer.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a side cross-sectional view depicting the channel region of astack of nanosheets having a gate metal present thereon, wherein thenanosheets are suspended over a supporting substrate.

FIG. 2 is a side cross-sectional view depicting a pinch off regionbetween adjacently stacked nanosheets having a remaining portion of thegate metal present therein following the application of a wet etchantapplied to the structure depicted in FIG. 1 to remove the gate metal,wherein over etching of the gate metal damages the underlying gatedielectric and channel semiconductor material at the exposed edges ofthe nanosheets.

FIG. 3 is a side cross-sectional view depicting one embodiment of a duallayer scheme applied to the channel region of a stack of nanosheets, inwhich the dual layer scheme includes a gate metal and an etch stoplayer.

FIG. 4 is a side cross-sectional view depicting a pinch off regionbetween adjacently stacked nanosheets having a remaining portion of thegate metal present therein following the application of a wet etchantapplied to the structure depicted in FIG. 3 to remove the gate metal,wherein the etch stop layer reduces over etching effects.

FIG. 5 is a flow chart describing one embodiment of a method for forminggate structures to nanosheet semiconductor devices.

FIG. 6 is a side cross-sectional view depicting the channel region oftwo stacks of nanosheets.

FIG. 7 is a side cross-sectional view depicting forming a gatedielectric on each nanosheet of the two stacks of nanosheets, andforming the dual layer stack including an etch stop layer and a firstgate metal layer on the gate dielectric.

FIG. 8 is a side cross-sectional view of one embodiment of forming ablock mask over the first stack of nanosheets, and removing the firstgate metal layer from the second stack of nanosheets.

FIG. 9 is a side cross-sectional view of one embodiment of removing theetch stop layer from the second stack of nanosheets.

FIG. 10 is a side cross-sectional view of one embodiment of forming asecond gate metal layer over the first and second stacks of nanosheetsdepicted in FIG. 9.

FIG. 11 is a side cross-sectional view depicting forming a gateelectrode material layer over the structure depicted in FIG. 9 followedby pattern and etch processes to define gate structures.

DETAILED DESCRIPTION

Detailed embodiments of the claimed methods, structures and computerproducts are disclosed herein; however, it is to be understood that thedisclosed embodiments are merely illustrative of the claimed structuresand methods that may be embodied in various forms. In addition, each ofthe examples given in connection with the various embodiments areintended to be illustrative, and not restrictive. Further, the figuresare not necessarily to scale, some features may be exaggerated to showdetails of particular components. Therefore, specific structural andfunctional details disclosed herein are not to be interpreted aslimiting, but merely as a representative basis for teaching one skilledin the art to variously employ the methods and structures of the presentdisclosure.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment. For purposes of thedescription hereinafter, the terms “upper”, “over”, “overlying”,“lower”, “under”, “underlying”, “right”, “left”, “vertical”,“horizontal”, “top”, “bottom”, and derivatives thereof shall relate tothe embodiments of the disclosure, as it is oriented in the drawingfigures. The term “positioned on” means that a first element, such as afirst structure, is present on a second element, such as a secondstructure, wherein intervening elements, such as an interface structure,e.g. interface layer, may be present between the first element and thesecond element. The term “direct contact” means that a first element,such as a first structure, and a second element, such as a secondstructure, are connected without any intermediary conducting, insulatingor semiconductor layers at the interface of the two elements.

In one aspect, embodiments of the present disclosure describe anano-sheet transistors. Nanosheet MOSFET is a candidate for futurecomplementary metal oxide semiconductor (CMOS) technology. For example,nanosheet is being pursued as a viable device option beyond 7 nm.Integration is very tight in 7 nm and scaling beyond those dimensions.For example, in a complementary metal oxide semiconductor (CMOS)arrangement including both n-type and p-type nanosheet devices beingprocessed on a same substrate, during gate metal patterning and metalremoval from a first conductivity type, e.g., n-type or p-typeconductivity type, nanosheet structure, while attempting to protect thegate metal on a second conductivity type, e.g., n-type or p-type,nanosheet structure that is different from the first conductivity type,it has been determined that the wet etchants that are intended to removethe exposed metals leak under block masks and attack the metals that areintended to remain in the device structure.

The above example of uncontrolled excessive etching in nanosheet devicesduring complementary metal oxide semiconductor (CMOS) type process flowscan be overcome by the methods and structures described herein, whichinclude a protected dual layer scheme within the channel regions of thenanosheet device structures. As will be described in further detailsbelow, the protective dual liner may include two metal nitridecompositions that are selected so that during etching of the exterior orsecond layer, and underlying gate dielectric is provided by the firstlayer, in which the composition of the second layer provides that is beremoved selectively to the second layer. As used herein, the term“selective” in reference to a material removal process denotes that therate of material removal for a first material is greater than the rateof removal for at least another material of the structure to which thematerial removal process is being applied. For example, in oneembodiment, a selective etch may include an etch chemistry that removesa first material selectively to a second material by a ratio of 10:1 orgreater, e.g., 1000:1.

In one example, the first metal layer of the dual layer scheme metalpatterning is composed of tantalum nitride (TaN) and the second metallayer is composed of titanium nitride (TiN), or TiAl, or TiAlC. Duringetch processes applied to two channel regions of nanosheet deviceshaving different conductivity types, the wet etch for removing thesecond metal layer, i.e., TiN layer or TiAl, or TiAlC, is selective tothe first metal layer, i.e., TaN layer; and during the second metallayer etch, the high-k gate dielectric that is underlying the firstmetal layer, e.g., TaN layer, is protected by the first metal layer.During the first metal layer etch, the tunnel between the nanosheets isnot pinched off, in which much more of the over etch to the high-k gatedielectric can be avoided. Further details regarding the method andstructures of the present disclosure are now described with reference toFIGS. 1-4.

FIGS. 1 and 2 illustrate one example of over-etching in the channelregion of the nanosheet devices that has been discovered in connectionwith forming multiple nanosheet devices using a replacement gateprocess, and in some cases different types of material layers for thefunctional gate structures to the different FinFET devices on thesemiconductor substrate. For example, over etching has been observed inCMOS processing of nanosheet devices during gate metal removal from thep-type conductivity device, e.g., pFET type device, while keeping thegate metal on the n-type conductivity device, e.g., on the nFET typedevice; or vice versa. Metal removal from the channel regions of thedevices is performed using wet etching. For removing gate materiallayers, e.g., metal layers for the gate structure, from a replacementgate structure to a field effect transistor having a channel regionprovided by a nanosheet architecture, the wet etchant is applied for along time that is not typical of wet etch processes used in planar orFinFET device geometries. For example, the long duration of the wet etchprocess can be used to remove any pinched off metal that is presentbetween, i.e., inside, stacked nanosheets 10 of the channel region ofthe device. This is depicted by the comparison of FIG. 1 and FIG. 2.FIG. 1 is a side cross sectional view of the channel region of a stackof nanosheets 10 having a gate metal 20 present thereon, wherein thenanosheets 10 are suspended over a supporting substrate 5. For example,the width W1 for each of the nanosheets 10 may range from 5 nm to 100nm, and the distance separating adjacently stacked nanosheets 10 may be5 nm to 20 nm. FIG. 1 also depicts how the gate metal 20 is presentsurrounding each of the adjacently stacked nanosheets 10, wherein aconformal gate dielectric 15 is also present around the entire perimeterof the nanosheets 10. The structure depicted in FIG. 1 illustrates howthe channel region of a nanosheet device may look prior to removing thegate metal 20 in a replacement gate process. In some instances, at leasta second stack of nanosheets (not shown) is present on the samesupporting substrate 5 as the stack of nanosheets 10 that are depictedin FIG. 1. As will be described in further detail below, the replacementgate processes that are described herein, which employ wet chemical etchprocesses to remove metal gate material layers, may be used toindependently process one region of the substrate 5 containing nanosheetdevices of a first conductivity type, i.e., p-type, from another regionof the substrate 5 containing nanosheet devices of a second conductivitytype, i.e., n-type.

FIG. 2 illustrates how the width W1 of the nanosheets 10, as well as thespace separating the adjacently stacked nanosheets 10, results in apinch off region of remaining metal from the gate metal that is presentbetween adjacently stacked nanosheets 10 following etch chemical etchingto remove the gate metal 20. FIG. 2 depicts a pinch off region betweenadjacently stacked nanosheets 10 having a remaining portion of the gatemetal 20 present therein following the application of a wet etchant toremove the gate metal. In this example, over-etching of the gate metal20 damages the underlying gate dielectric 15 and channel semiconductormaterial at the exposed edges E1 of the nanosheets 10.

FIG. 2 illustrates that during the middle of the etch process durationfor removing the gate metal 20, the gate dielectric 15 at the top sheetsurface of the uppermost nanosheet 10, and corners of all of thenanosheets, i.e., at both sides of the gate structure, can be exposed bythe wet etch process. These corners of the nanosheets 10 are identifiedby reference number E1 in FIG. 2. As the wet etch process durationincreases, the material layers on the top sheet surface of the uppermostnanosheet 10, and the edges E1 of the nanosheets 10, can be aggressivelyetched as the structure is over etched in attempts to remove the gatemetal 20 from the pinch off region. The degree of over etching can besignificantly greater in nanosheet devices than the amount ofover-etching that can occur in conventional geometry, i.e., planar,metal oxide semiconductor field effect transistors (MOSFETs) and/or fintype field effect transistors (FinFETs). Therefore, the gate dielectric15, e.g., high-k gate dielectric, that is present on the edges E1 andthe top sheet surface of the uppermost nanosheet 10 is more aggressivelyattacked by over etching in nanosheet devices, as depicted in FIGS. 1and 2, than conventional geometry field effect transistor semiconductordevices, e.g., planar, metal oxide semiconductor field effecttransistors (MOSFETs) and/or fin type field effect transistors(FinFETs).

Referring to FIGS. 3 and 4, to address the above over etching scenariothat has been described above with reference to FIGS. 1 and 2, a duallayer scheme is described herein for protecting the channel region ofthe nanosheets, i.e., the semiconductor material of the nanosheet 10and/or the gate dielectric 15 that is present on the semiconductormaterial of the nanosheet 10. For example, in one embodiment, the duallayer scheme may be configured for the channel region of a p-typenanosheet device, in which a first layer, i.e., etch stop layer 25, iscomposed of a first nitride, and is present directly on gate dielectric15 that is present on the channel region of the nanosheets 10, and asecond layer, i.e. gate metal layer 20, that is present on the firstlayer. In some embodiments, when the gate metal layer 20 is composed oftitanium nitride (TiN), or TiC, or TiAlC, the etch stop layer 25 iscomposed of tantalum nitride (TaN).

FIG. 3 depicts one embodiment of the dual layer scheme applied to thechannel region of a stack of nanosheets 10. The nanosheets 10 that aredepicted in FIG. 3 may have dimensions for their width W1 and degree ofseparation S1, as described above with reference to FIGS. 1 and 2. Forexample, the width W1 may range from 5 nm to 100 nm, and the separationS1 may be 5 nm to 20 nm. The nanosheets 10 may be composed of a type IVsemiconductor, such as silicon (Si), germanium (Ge), silicon germanium(SiGe) or a combination thereof. In other embodiments, the nanosheets 10may be composed of a type III-V semiconductor material, such as galliumarsenide (GaAs), indium gallium arsenide (InGaAs) or a combinationthereof. The gate dielectric 15 that is present on the channel region ofthe nanosheets 10 may be composed of a high-k gate dielectric. High-kgate dielectrics have a dielectric constant that is greater than thedielectric constant of silicon oxide (SiO₂) at room temperature (e.g.,20° C. to 25° C.) and atmospheric pressure, i.e., 1 atm. An example of ahigh-k dielectric material that can be used for the gate dielectric 15is hafnium oxide (HfO₂).

The structure depicted in FIG. 3 illustrates how the channel region of ananosheet device may look prior to removing the gate metal 20 in areplacement gate process, in which the etch stop layer 25 protects theedge portions E1 of the nanosheets 10, as well as the upper sheetsurface of the nanosheets 10 from the wet etch chemistry that removesthe gate metal 20. In some instances, at least a second stack ofnanosheets (not shown) is present on the same supporting substrate 5 asthe stack of nanosheets 10 that are depicted in FIG. 1. As will bedescribed in further detail below, the replacement gate processes thatare described herein, which employ wet chemical etch processes to removemetal gate material layers, may be used to independently process oneregion of the substrate 5 containing nanosheet devices of a firstconductivity type, i.e., p-type, from another region of the substrate 5containing nanosheet devices of a second conductivity type, i.e.,n-type. As will be described below, this can allow for different metalcomposition material layers to provide different work functions that canbe suitable for both n-type and p-type devices on the same semiconductorsubstrate 5.

In some embodiments, the dual layer scheme includes an etch stop layer25. The composition of the etch stop layer 25 is selected so that thewet etch chemistry that removes the gate metal 20 does not remove theetch stop layer 25. More specifically, the composition of the etch stoplayer 25 is selected so that the gate metal 20 is removed selectively tothe etch stop layer 25. For example, the composition of the etch stoplayer 25 may be a first metal nitride, and the gate metal 20 may becomposed of a second metal nitride, in which the second metal nitridecan be removed by a wet etch chemistry that is selective to the firstmetal nitride. For example, the first metal nitride may be tantalumnitride (TaN), while the second metal nitride may be composed oftitanium nitride (TiN), or TiAl, or TiAlC. The etch stop layer 25 may bea conformal layer that is present on an entirety of the channel regionportion of the nanosheets 10. The term “conformal” denotes a layerhaving a thickness that does not deviate from greater than or less than30% of an average value for the thickness of the layer. For example, theetch stop layer 25 may have a thickness ranging from 1 nm to 10 nm. Inother examples, the etch stop layer 25 can have a thickness ranging from2 nm to 5 nm. The etch stop layer 25 can be formed using any conformaldeposition process, such as atomic layer deposition (ALD). In otherexamples, the etch stop layer 25 may be deposited using plasma enhancedchemical vapor deposition (PECVD) and/or metal organic chemical vapordeposition (MOCVD).

As noted above, the composition of the gate metal 20 can be removed byan etch chemistry that is selective to the etch stop layer 25. In someembodiments, the composition of the gate metal 20 is also selected toprovide a work function adjustment for the gate structure of thenanosheet device, in which the gate metal 20 remains, i.e., is notremoved by the wet chemical etch. As noted above, although FIG. 3 onlydepicts a single gate structure, the methods and structures describedherein are applicable to processing multiple conductivity typenanosheets on the same substrate 5, e.g., in a complementary metal oxidesemiconductor (CMOS) type arrangement. For processing multipleconductivity semiconductor devices, the composition for the gate metal20 may be selected for one region of devices, but blanket deposited intoboth regions of the substrate. Thereafter, the region of the device inwhich the gate metal 20 remains is masked with an etch mask; and thegate metal 20 is removed from the regions of the device in which thework function adjustment for the gate metal 20 does not advantageouslyimpact the devices within that region. As noted above, the gate metal 20may be removed using a wet chemical etch that is selective to the etchstop layer 25, wherein the etch stop layer 25 protects the underlyinggate dielectric 15 and the nanosheet 10. In the embodiment depicted inFIGS. 3 and 4, the gate metal 20 is being removed from a nanosheet stack10 that is being employed for providing a p-type device. Although notdepicted in FIGS. 3 and 4, the gate metal 20 material layer remains onnanosheet stacks that are used for providing an n-type device.Therefore, in the embodiments that are depicted in FIGS. 3 and 4, themetal gate 20 can be composed of a composition that provides an n-typework function shift. In some embodiments, to provide the n-type workfunction shift for the n-type nanosheet semiconductor device, the metalgate 20 may be composed of metal nitride (TiN) or TiAl, or TiAlC.

The gate metal 20 may be deposited to a thickness that fills the spacebetween adjacent nanosheets 10, as well as encapsulating the nanosheets10 with gate material. In some embodiments, the gate metal 20 may bedeposited at a thickness greater than the thickness of the gatedielectric 15. For example, the gate metal 20 may be deposited to athickness ranging from 5 nm to 50 nm. The gate metal 20 may be depositedusing physical vapor deposition (PVD), such as sputtering; chemicalvapor deposition (CVD), such as plasma enhanced chemical vapordeposition (PECVD); plating, such as electroless plating and/orelectroplating; atomic layer deposition (ALD); and combinations thereof.

FIG. 4 depicts applying a wet chemical etch to the structure depicted inFIG. 3 to remove the gate metal 20. In some embodiments, the gate metal20 is removed by a wet chemical etch that is selective to the etch stoplayer 25 of the dual layer gate structure scheme, wherein the etch stoplayer 25 protects the underlying gate dielectric 15 and thesemiconductor material of the nanosheets 10 from the damages of overetching effects. Referring to FIG. 4, a pinch off region of remaininggate metal 20 is depicted between adjacently stacked nanosheets 10. Thestructure depicted in FIG. 4 illustrates a remaining portion of the gatemetal 20, i.e., pinch off portion, that is present between adjacentlystacked nanostructures 10 following the application of a wet etchantapplied to the structure depicted in FIG. 3 to remove the gate metal 20.Like the structures described with reference to FIGS. 1 and 2, at thisstage of the etch process, a majority of the gate metal 20 is removedincluding portions from the upper surface layer of the uppermostnanosheet 10 and portions from the edges E1 of the nanosheets 10.Different from the structures described with reference to FIGS. 1 and 2,the etch stop layer 25 protects the underlying gate dielectric 15 andthe underlying portions of the nanosheets 10 from being etched, i.e.,over etched, by the wet chemical etchant that is removing the gate metal10.

A more complete replacement gate process flow for forming nanosheetsincluding the dual layer scheme is now described with detail to FIGS.5-11.

FIG. 5 is a flow chart describing a process flow that employs the duallayer scheme for independently processing the gate structures of oneconductivity type set of nanosheet semiconductor devices relative to thegate structures of a second conductivity type set of nanosheetsemiconductor devices.

Step 1 of the process flow in the flow chart depicted in FIG. 5 includesforming at least two sets of nano-sheet stacks (a nanosheet isidentified by reference number 10 in FIG. 3) on a single substrate 5, asdepicted in FIG. 6.

The substrate 5 may be composed of a supporting material, such as asemiconductor material, e.g., silicon, or dielectric material, such assilicon oxide or silicon nitride.

The stacks 11 a, 11 b of nanosheets 10 are formed from stacks of layeredsemiconductor materials. The stacks of the at least two semiconductormaterials are typically composed of two alternating materials. Forexample, the first semiconductor material that is present on thesubstrate 5 for each of the stacks 11 a, 11 b may be composed of asilicon and germanium containing semiconductor material, such as silicongermanium (SiGe), whereas the second semiconductor material for thestacks 11 a, 11 b that is present on the first semiconductor materialmay be composed of a germanium free silicon containing semiconductormaterial, such as silicon (Si). It is noted that this is only oneexample of semiconductor materials that may be used for the stacks 11 a,11 b of nanosheets 10. Any semiconductor material composition may beused for each of the at least two semiconductor materials 5 a, 5 b solong as at least one of the compositions selected allow for selectiveetching between at least two of them. Any type IV semiconductorcomposition combination and/or III-V semiconductor compositioncombination is suitable for use with the present disclosure. Forexample, the compositions selected for the at least two semiconductormaterials include Si, SiGe, SiGeC, SiC, single crystal Si, polysilicon,i.e., polySi, epitaxial silicon, i.e., epi-Si, amorphous Si, i.e., α:Si,germanium, gallium arsenide, gallium nitride, cadmium telluride and zincsellenide.

The stacks 11 a, 11 b of the at least two semiconductor materials may beformed using a deposition process, such as chemical vapor deposition(CVD). Chemical vapor deposition (CVD) is a deposition process in whicha deposited species is formed as a result of chemical reaction betweengaseous reactants at greater than room temperature (25° C. to 900° C.);wherein solid product of the reaction is deposited on the surface onwhich a film, coating, or layer of the solid product is to be formed.Variations of CVD processes suitable for use the present disclosureinclude, but not limited to, Atmospheric Pressure CVD (APCVD), LowPressure CVD (LPCVD) and Plasma Enhanced CVD (PECVD), Metal-Organic CVD(MOCVD) and combinations thereof may also be employed.

The thickness of each of the at least two semiconductor material layersmay range from 1 nm to 30 nm. In another embodiment, the thickness ofeach of the at least two semiconductor material layers may range from 5nm to 20 nm.

Following deposition, the semiconductor material layers may be patternedto provide the geometry of the stacks 11 a, 11 b of the nanosheets 10.In some embodiments, the semiconductor material layers may be patternedusing deposition, photolithography and subtractive etch processing.

A shallow trench isolation region 6 may be formed between the stack ofsemiconductor material layers that provides the stack 11 a of nanosheets 10 for the first conductivity device, and the stack ofsemiconductor material layers that provides the stack 11 b of thenanosheets 10 for the second conductivity device.

Referring to FIG. 5, the process flow may continue with forming areplacement gate structures on the channel portions of the stack of theat least two semiconductor materials. By “replacement” it is meant thatthe structure is present during processing of the semiconductor device,but is removed from the semiconductor device prior to the device beingcompleted. In the present process flow, a replacement gate structure 15is employed as part of a replacement gate process. As used herein, theterm “replacement gate structure” denotes a sacrificial structure thatdictates the geometry and location of the later formed functioning gatestructure. The “functional gate structure” operates to switch thesemiconductor device from an “on” to “off” state, and vice versa.

In one embodiment, the sacrificial material that provides thereplacement gate structure may be composed of any material that can beetched selectively to the at least one of the material layers of thestacks of the at least two semiconductor materials. In one embodiment,the replacement gate structure may be composed of a silicon-includingmaterial, such as polysilicon. In another embodiment, the replacementgate structure may be composed of a dielectric material, such as anoxide, nitride or oxynitride material, or amorphous carbon. Thereplacement gate structure may be formed using deposition (e.g.,chemical vapor deposition) photolithography and etch processes (e.g.,reactive ion etching).

A spacer is formed on the sidewall of each of the replacement gatestructures for the first conductivity type nanosheet devices and thesecond conductivity type nanosheet devices. The spacer is typicallycomposed of a dielectric material, such as an oxide, nitride, oroxynitride material. The spacer may be formed using a depositionprocess, such as chemical vapor deposition (CVD), and an anisotropicetch back method.

Following the formation of the replacement gate structure, the exposedportions of the stack of two semiconductor materials that extend beyondthe replacement gate structures for each of the stack of nanosheets 11 afor the first conductivity type nanosheet device and the stack ofnanosheets 11 b for the second conductivity type nanosheet device. Insome embodiments, the etch process for removing the exposed portions ofthe stacks of the at least two semiconductor materials is an anisotropicetch process. The term “anisotropic etch process” denotes a materialremoval process in which the etch rate in the direction normal to thesurface to be etched is greater than in the direction parallel to thesurface to be etched. The anisotropic etch may include reactive-ionetching (RIE). Other examples of anisotropic etching that can be used atthis point of the present disclosure include ion beam etching, plasmaetching or laser ablation.

Referring to FIG. 5, in one embodiment, the method continues withforming the source and drain regions for the first conductivity typenanosheet devices and the second conductivity type nanosheet devices atstep 3. The term “conductivity type” denotes whether a device has sourceand drain regions doped to an n-type or a p-type conductivity type. Asused herein, “p-type” refers to the addition of impurities to anintrinsic semiconductor that creates deficiencies of valence electrons.For example, in a type IV semiconductor material, such as silicon (Si),germanium (Ge) or silicon germanium (SiGe), examples of p-type dopants,i.e., impurities, include but are not limited to: boron, aluminum,gallium and indium. As used herein, “n-type” refers to the addition ofimpurities that contributes free electrons to an intrinsicsemiconductor. For example, in a type IV semiconductor, such as asilicon (Si), germanium (Ge), and silicon germanium (SiGe), examples ofn-type dopants, i.e., impurities, include but are not limited toantimony, arsenic and phosphorous.

The source and drain regions may be composed of epitaxial semiconductormaterial. The term “epitaxial semiconductor material” denotes asemiconductor material that has been formed using an epitaxialdeposition or growth process. “Epitaxial growth and/or deposition” meansthe growth of a semiconductor material on a deposition surface of asemiconductor material, in which the semiconductor material being grownhas substantially the same crystalline characteristics as thesemiconductor material of the deposition surface. In some embodiments,when the chemical reactants are controlled and the system parameters setcorrectly, the depositing atoms arrive at the deposition surface withsufficient energy to move around on the surface and orient themselves tothe crystal arrangement of the atoms of the deposition surface. Thus, insome examples, an epitaxial film deposited on a {100} crystal surfacewill take on a {100} orientation. As used herein, the term “drain” meansa doped region in semiconductor device located at the end of the channelregion, in which carriers are flowing out of the transistor through thedrain. The term “source” is a doped region in the semiconductor device,in which majority carriers are flowing into the channel region.

The epitaxial semiconductor material grows from the etched sidewallsurface of the semiconductor material layers that provide the stacks 11a, 11 b of nanosheets 10. In some embodiments, the epitaxialsemiconductor material may be composed of silicon (Si), germanium (Ge),silicon germanium (SiGe), silicon doped with carbon (Si:C) or theepitaxial semiconductor material 35 may be composed of a type III-Vcompound semiconductor, such as gallium arsenide (GaAs). In oneembodiment, a number of different sources may be used for the epitaxialdeposition of the epitaxial semiconductor material. Examples of siliconincluding source gasses may include silane, disilane, trisilane,tetrasilane, hexachlorodisilane, tetrachlorosilane, dichlorosilane,trichlorosilane, methylsilane, dimethylsilane, ethylsilane,methyldisilane, dimethyldisilane, hexamethyldisilane and combinationsthereof. Examples of germanium including source gasses for epitaxiallyforming an undoped epitaxial semiconductor material of a germaniumcontaining semiconductor include germane, digermane, halogermane,dichlorogermane, trichlorogermane, tetrachlorogermane and combinationsthereof.

Epitaxial deposition may be carried out in a chemical vapor depositionapparatus, such as a metal organic chemical vapor deposition (MOCVD)apparatus or a plasma enhanced chemical vapor deposition (PECVD)apparatus. The epitaxial semiconductor material may be in situ doped toa p-type or n-type conductivity. The term “in situ” denotes that adopant, e.g., n-type or p-type dopant, is introduced to the basesemiconductor material, e.g., silicon or silicon germanium, during theformation of the base material. For example, an in situ doped epitaxialsemiconductor material may introduce n-type or p-type dopants to thematerial being formed during the epitaxial deposition process thatincludes n-type or p-type source gasses. In the embodiments in which thesemiconductor device being formed has p-type source and drain regions,and is referred to as a p-type semiconductor device, the doped epitaxialsemiconductor material 35 is doped with a p-type dopant to have a p-typeconductivity. In a type IV semiconductor, such as silicon, examples ofp-type dopants, i.e., impurities, include but are not limited to, boron,aluminum, gallium and indium. In a type IV semiconductor, such assilicon, examples of n-type dopants, i.e., impurities, include but arenot limited to antimony, arsenic and phosphorous.

In one embodiment, the n-type gas dopant source may include arsine(AsH₃), phosphine (PH₃) and alkylphosphines, such as with the empiricalformula R_(x)PH_((3-x)), where R=methyl, ethyl, propyl or butyl and x=1,2 or 3. Alkylphosphines include trimethylphosphine ((CH₃)₃P),dimethylphosphine ((CH₃)₂PH), triethylphosphine ((CH₃CH₂)₃P) anddiethylphosphine ((CH₃CH₂)₂PH). The p-type gas dopant source may includediborane (B₂H₆).

Referring to FIG. 6, in some embodiments, the source and drain regionsto the first stack 11 a of nanosheets 10 may be doped to a p-typeconductivity to provide p-type nanosheet semiconductor devices; and thesource and drain regions to the first stack 11 b of nanosheets may bedoped to an n-type conductivity to provide n-type nanosheetsemiconductor devices.

Referring to FIG. 5, the method may continue with removing thereplacement gate structures at step 4. In some embodiments, removing thereplacement gate structure may begin with forming an interleveldielectric layer on the portions of the device including the source anddrain regions, and planarizing the interlevel dielectric layer to exposean upper surface of the replacement gate structures to each stack ofsemiconductor material layers that provides the stack of nanostructures11 a for the first conductivity type device, and the stack ofnanostructures 11 b for the second conductivity type device. Thereplacement gate structure may be removed using a wet or dry etchprocess. In one embodiment, the first replacement gate structure may beremoved by at least one of an anisotropic etch process, such as reactiveion etch (RIE), or an isotropic etch process, such as a wet chemicaletch. In one example, the etch process for removing the firstreplacement gate structure 15 can include an etch chemistry for removingthe first replacement gate structure 15 is selective to the materiallayers of the stack 10 of the first and second semiconductor materiallayers 5 a, 5 b.

Referring to FIG. 5, the method may continue with removing one of thesemiconductor material layers in the stacks for forming the nanosheets10 for the first stack 11 a of nanosheets 10 for the first conductivitytype nanosheet device and the second stack 11 b of nanosheets 10 for thesecond conductivity type nanosheet device at step 5. In someembodiments, at least one of the material layers of the stacks isremoved selectively to at least a remaining material composition thatprovides suspended channel structures, i.e., nanosheets 10. For example,in one embodiment when the first semiconductor material layer of thestacks is composed of silicon germanium (SiGe) and the secondsemiconductor material layer of the stacks is composed of silicon, thefirst semiconductor material layer may be removed selectively to thesecond semiconductor material layer with an etch process, such as a wetchemical etch. Removing the replacement gate structure produces a gateopening that exposes a channel portion of the stacks of the twosemiconductor materials that are processed to provide the first stack 11a of the nanosheets 10 for the first conductivity type nanosheet devicesand the second stack 11 b of the nanosheets 10 for the secondconductivity type nanosheets devices.

Following removal of one of the material layers of the stack, e.g.,removal of the first semiconductor material layer of the stack, asuspended channel structure is provided, as depicted in FIG. 6. By“suspended channel” it is meant that at least one semiconductor materiallayer, i.e., nanosheets 10, is present overlying the substrate 5,wherein the sidewalls of the suspended channel are supported, e.g.,anchored, in the spacer. Gate structure materials, electricallyconductive materials and/or semiconductor materials may be formed in thespace surrounding the suspended structures. The suspended channels areprovided by nanosheets 10. The term “nanosheet” denotes a substantiallytwo dimensional structure with thickness in a scale ranging from 1 to100 nm. The width and length dimensions of the nanosheet may be greaterthan the width dimensions. Although FIG. 6 depicts three suspendedchannel structures for each of the first stack 11 a of nanosheets 10 andthe second stack 11 b of nanosheets 10, the present disclosure is notlimited to only this embodiment. Any number of suspended channelstructures, as suspended nanosheets 10, may be formed using the methodsand structures provided by the present disclosure.

Referring to FIG. 5, the method may continue with depositing a gatedielectric 15 on the channel regions of the nanosheets 10 in the firstand second stacks 11 a, 11 b of nanosheets 10 for the first and secondconductivity type nanosheet devices at step 6, as depicted in FIG. 7.The gate dielectric 15 is a portion of the functional gate structure.The functional gate structure operates to switch the semiconductordevice from an “on” to “off” state, and vice versa. The functional gatestructure may be formed by first depositing at least one gate dielectricon the nanosheets 10 of the semiconductor device followed by filling thevoid with at least one gate conductor that is deposited on the at leastone gate dielectric 15. The gate dielectric 15 can be formed on theentirety of the exterior surface of the nanosheets 10.

The at least one gate dielectric 15 may comprise a semiconductor oxide,semiconductor nitride, semiconductor oxynitride, or a high k materialhaving a dielectric constant greater than silicon oxide. Exemplaryhigh-k dielectrics include, but are not limited to, HfO₂, ZrO₂, La₂O₃,Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, HfO_(x)N_(y), ZrO_(x)N_(y),La₂O_(x)N_(y), Al₂ON_(y), TiO_(x)N_(y), SrTiO_(x)N_(y), LaAlO_(x)N_(y),Y₂O_(x)N_(y), SiON, SiN_(x), a silicate thereof, and an alloy thereof.Each value of x is independently from 0.5 to 3 and each value of y isindependently from 0 to 2.

The gate dielectric 15 may be deposited on the channel region portionsof the first and second stacks 11 a, 11 b of nanosheets 10 using atomiclayer deposition (ALD). Atomic Layer Deposition (ALD) uses self-limitingsurface reactions to deposit material layers in the monolayer orsub-monolayer thickness regime. ALD is similar in chemistry to chemicalvapor deposition (CVD), except that the ALD reaction breaks the CVDreaction into two half-reactions, keeping the precursor materialsseparate during the reaction. In some embodiments, the atomic layerdeposition (ALD) process may be a thin film deposition method in which afilm is grown on a deposition surface by exposing the surface toalternate gaseous species (typically referred to as precursors). Incontrast to chemical vapor deposition, the precursors are never presentsimultaneously in the reactor, but they are inserted as a series ofsequential, non-overlapping pulses. In each of these pulses, theprecursor molecules react with the surface in a self-limiting way, sothat the reaction terminates once all the reactive sites on the surfaceare consumed. In some embodiments, the monolayer deposition provided bythe atomic layer depositions mechanisms provides that the layer beconformal.

The at least one gate dielectric 15 can also be formed by chemical vapordeposition (CVD), such as plasma enhanced chemical vapor deposition(PECVD), metal organic chemical vapor deposition (MOCVD), or atomiclayer deposition (ALD). In another embodiment, the at least one gatedielectric can be formed using thermal growth methods, such asoxidation.

In some embodiments, the at least one gate dielectric 15 may have athickness ranging from about 1.0 nm to about 6.0 nm.

Referring to FIG. 5, in a following process step a dual layer scheme ofmetal containing layers may be deposited on the gate dielectric 15 thatis present on the channel region portion of the first stack and secondstack 11 a, 11 b of nanostructures at step 7. In some embodiments, thedual layer scheme of metal containing layers includes an etch step layer25 and a metal gate layer 20, as depicted in FIG. 7. Because the processsequence that is described with reference to FIGS. 5-11 is a processthat forms two nanosheet devices on a single substrate, i.e., two gatestructure (one for each device), the metal gate layer 20 will hereafterbe referred to as a first metal gate layer 20.

In one embodiment, the dual layer scheme may be configured for thechannel region of a p-type nanosheet device, i.e., the device formedfrom the first stack 11 a of nanosheets 10, in which a first layer,i.e., etch stop layer 25, is composed of a first nitride, and is presentdirectly on gate dielectric 15 that is present on the channel region ofthe nanosheets 10, and a second layer, i.e. first gate metal layer 20,that is present on the first layer. In some embodiments, when the firstgate metal layer 20 is composed of titanium nitride (TiN) or TiAl, orTiAlC, the etch stop layer 25 is composed of tantalum nitride (TaN).Because the dual layer scheme is configured to provide a p-typenanosheet device, the portion of the gate metal layer 20 is processed toremain on the nanosheets 10 in the first stack 11 a, but the gate metallayer 20 is removed from the nanosheets 10 in the second stack 11 b.

As depicted in FIG. 7, the etch stop layer 25 and the first gate metallayer 20 can be blanket deposited on the channel region of both thenanosheets 10 in the first stack 11 a that provides the p-type nanosheetsemiconductor devices and the second stack 11 b that provides the n-typenanosheet semiconductor devices. As will be described in greater detailbelow, the etch stop layer 25 protects the nanosheets 10, i.e.,particularly the gate dielectric 15 on the edges E1 and upper surfacesof the nanosheets 10, while the first gate metal layer 20 is beingremoved from the second stack 11 b of nanosheets 10 that are processedto provide n-type nanosheet semiconductor devices.

The etch stop layer 25 is formed directly on the gate dielectric layer15. The etch stop layer 25 that is depicted in FIG. 7 is similar to theetch stop layer 25 described above with reference to FIGS. 3 and 4.Therefore, the description of the etch stop layer 25 that is providedabove for FIGS. 3 and 4 provides the description for some embodiments ofthe etch stop layer described in FIG. 7, as well as the method describedwith reference to FIGS. 5-11.

In some embodiments, the etch stop layer 25 may be composed of a metalnitride. For example, the etch stop layer 25 may have a composition thatprovides that the later deposited first gate metal layer 20 can beremoved by a wet etch that does not remove the etch stop layer 25. Thisprotects the underlying gate dielectric layer 15. Thereafter, in someembodiments, the etch stop layer 25 may be removed by a wet etch thatdoes not remove the material of the underlying nanosheet 10.

In one example, when the subsequently formed first gate metal layer 20is composed of titanium nitride (TiN), the etch stop layer 25 iscomposed of tantalum nitride (TaN). It is noted that tantalum nitride(TaN) is only one example of a composition of an etch stop layer 25. Forexample, the etch stop layer 25 can be composed of other metal nitrides,such as tungsten nitride (WN), or aluminum oxide (AlOx), or lanthanumoxide (LaOx).

In some embodiments, the etch stop layer 25 may be blanket depositedusing atomic layer deposition (ALD). In other examples, the etch stoplayer 25 may be deposited using physical vapor deposition (PVD),chemical vapor deposition (CVD), plating or combinations thereof. Insome embodiments, the at least one etch stop layer 25 may have athickness ranging from about 1.0 nm to about 6.0 nm.

The first gate metal layer 20 is formed directly on the etch stop layer25. The first gate metal layer 20 that is depicted in FIG. 7 is similarto the gate metal layer 20 described above with reference to FIGS. 3 and4. Therefore, the description of the gate metal layer 20 that isprovided above for FIGS. 3 and 4 provides the description for someembodiments of the gate metal layer 20 described in FIG. 7, as well asthe method described with reference to FIGS. 5-11.

In some embodiments, the first gate metal layer 20 may be a p-type workfunction metal layer. As used herein, a “p-type work function metallayer” is a metal layer that effectuates a p-type threshold voltageshift. In one embodiment, the work function of the p-type work functionmetal layer ranges from 4.9 eV to 5.2 eV. As used herein, “thresholdvoltage” is the lowest attainable gate voltage that will turn on asemiconductor device, e.g., transistor, by making the channel of thedevice conductive. The term “p-type threshold voltage shift” as usedherein means a shift in the Fermi energy of a p-type semiconductordevice towards a valence band of silicon in the silicon containingsubstrate of the p-type semiconductor device. A “valence band” is thehighest range of electron energies where electrons are normally presentat absolute zero. In one embodiment, the p-type work function metallayer may be composed of titanium and their nitrided/carbide. In oneembodiment, the p-type work function metal layer is composed of titaniumnitride (TiN). Therefore, in some embodiments the gate metal layer 20may be titanium nitride (TiN), and may provide a p-type work functionlayer.

In one embodiment, a first gate metal layer 20 that is composed oftitanium nitride (TiN) may be deposited using atomic layer deposition(ALD). In one embodiment, the first gate metal layer 20 is composed oftitanium nitride (TiN) that may be deposited by a physical vapordeposition (PVD) method, such as sputtering. Examples of sputteringapparatus that may be suitable for depositing the p-type work functionmetal layer include DC diode type systems, radio frequency (RF)sputtering, magnetron sputtering, and ionized metal plasma (IMP)sputtering. In addition to physical vapor deposition (PVD) techniques,the first gate metal layer 20 may also be formed using chemical vapordeposition (CVD). In some embodiments, the first gate metal layer 20 mayhave a thickness ranging from about 1.0 nm to about 6.0 nm.

Although titanium nitride (TiN) has been described for the first gatemetal layer 20, the present disclosure is not limited to only thisexample. In some embodiments, the first gate metal layer 20 may be ap-type work function metal layer that is composed of TiAlN, Ru, Pt, Mo,Co and alloys and combinations thereof.

Referring to FIG. 5, at step 8, the method may continue with forming ablock mask 26 over the first stack 11 a of nanosheets 10 including theportion of the gate dielectric 15 on the nanosheets 10 in the firststack 11 a, and the dual layer scheme of the etch stop layer 25 and themetal gate electrode 20 that is present on the first stack 11 a ofnanosheets 10. The block mask 26 that is present over the first stack 11a of nanosheets 10 leaves the second stack 11 b of nanosheets exposed.Therefore, the block mask 26 that is present over the first stack 11 aof nanosheets 10 leaves the dual layer scheme of the etch stop layer 25and the metal gate electrode 20 that is present over the second stack 11b of nanosheets 10 exposed.

In some embodiments, the block mask 26 may comprise soft and/or hardmaskmaterials and can be formed using deposition, photolithography andetching. In one embodiment, the block mask 26 may be composed of aphotoresist material. In one embodiment, the block mask 26 is a hardmaskcomposed of a nitride-containing material, such as silicon nitride. Itis noted that it is not intended that the block mask 26 be limited toonly silicon nitride, as the composition of the hardmask may include anydielectric material that may be deposited by chemical vapor deposition(CVD) and related methods. Other hardmask compositions for the blockmask 26 may include silicon oxides, silicon oxynitrides, siliconcarbides, silicon carbonitrides, etc. Spin-on dielectrics may also beutilized as a hardmask material including, but not limited to:silsequioxanes, siloxanes, and boron phosphate silicate glass (BPSG).

Still referring to FIG. 8, while the block mask 26 is present overlyingthe first stack 11 a of nanosheets 10, the exposed portion of the gatemetal layer 20 is removed from the nanosheets 10 of the second stack 11b using a wet chemical etch that is selective to the etch stop layer 25.The etch for removing the gate metal layer 20 is also selective to theblock mask 26.

The etch stop layer 25 protects the underlying gate dielectric 15 andthe nanosheets 10 from being over-etched, especially at the edges E1 andthe upper surfaces of the nanosheets, where over-etching can occur instructures that do not include the etch stop layer 25. Due to thepresence of the etch stop layer 25, the etch time may be extended asnecessary to remove an entirety of the gate metal layer 20 that ispresent between the stacked nanosheets 10 in the second stack 11 b. Theregion between the adjacently stacked nanosheets 10, i.e., the verticalspace between vertically stacked nanosheets 10, may be referred to as a“tunnel” region. Due to the width and length of the nanosheets 10, andthe degree of separation between vertically stacked nanosheets 10, thefirst gate metal layer 20 that is present within the tunnel region mayneed etch time periods that would result in over-etching in structuresnot including the etch stop layer 25 to remove the entirety of the firstgate metal layer 20 from the tunnel region. In some embodiments, theetch stop layer 25 can enable the complete removal of the first gatemetal layer 20 from the second stack 11 b of nanosheets 10 including thetunnel region without any etch erosion and/or damage to the edges E1 ofthe nanosheets 10 and/or the upper surfaces of the nano sheets 10.

In one example, when the etch stop layer 25 is composed of tantalumnitride (TaN) and the metal gate layer 20 is composed of titaniumnitride (TiN) or TiAl, or TiAlC, the etch chemistry may be composed ofdiluted H₂O₂/NH₄OH solution at room temperature or hot (40-65° C.), ordiluted H₂O₂ solution or Tetraethylammonium Hydroxide solution (TEAH)etc.

Referring to FIG. 5, in a following step 9, the method may continue withremoving the exposed portion of the etch stop layer 25 from the secondstack 11 b of nanosheets 10, as depicted in FIG. 9. The etch stop layer25 may be removed by a wet etch that is selective to the gate dielectriclayer 15 that is present on the nanosheets 10 in the second stack 11 b.The etch chemistry for removing the etch stop layer 25 may also beselective to the block mask 26. In one example, when the gate dielectriclayer 15 is composed of hafnium oxide (HfO₂), and the etch stop layer iscomposed of tantalum nitride (TaN), the etching can be HF/HNO₃/H₂Osolution first then followed by the NH₄OH/H₂O₂ solution etching.

In another example, when the gate dielectric layer 15 is composed ofhafnium oxide (HfO₂), and the etch stop layer is composed of aluminumoxide (AlOx) or lanthanum oxide (LaOx), the etching can be dilutedHCL+H₂O₂ solution first then followed by the NH₄OH+H₂O₂ solutionetching.

In some embodiments, because the first gate metal 20 has been removedfrom the second stack 11 b of nanostructures including being entirelyremoved from the space, i.e., tunnel region, that is separatingvertically stacked nanosheets 10, the wet etch can access the portion ofthe etch stop layer 25 that is present between the adjacently stackednanosheets in the second stack 11 b. This can increase the etchefficiency for removing the etch stop layer 25, as well as reduced overetching of the etch stop layer 25 into the gate dielectric 15. Byreducing over etching of the gate dielectric 15, the methods andstructures provided herein reduce leakage, e.g., high-k leakage when thegate dielectric 15 is composed of a high-k gate dielectric.

Referring to FIG. 5, in a following step 10, the method may continuewith removing the block mask 26, and depositing a second gate metallayer 30 on at least the exposed gate dielectric 15 that is present onthe channel region of the nanosheets 10 in the second stack 11 b, asdepicted in FIG. 10. In the embodiment that is depicted in FIG. 10, thesecond gate metal layer 30 may be blanket deposited atop the entirestructure including the first stack 11 a of nanosheets 10, and thesecond stack 11 b of nanosheets 10. The present disclosure is notlimited to only this example, in some embodiments, prior to forming thesecond gate metal layer 30, a second block mask (not depicted) may beformed over the first stack 11 a of nanosheets 10, or the first blockmask 26 (depicted in FIG. 9) remains, wherein either one of these blockmasks protects the nanosheets in the first stack 11 a from having thesecond gate metal layer 30 deposited thereon.

The second gate metal layer 30 is deposited directly on the gatedielectric 15 that is present on the channel portion of the nanosheets10 in the second stack 11 b. In the embodiment depicted in FIG. 10, thesecond stack 11 b of nanosheets 10 is being processed to provide ann-type conductivity nanosheet device. In some embodiments, the secondgate metal layer 30 may be an n-type work function metal layer. As usedherein, an “n-type work function metal layer” is a metal layer thateffectuates an n-type threshold voltage shift. “N-type threshold voltageshift” as used herein means a shift in the Fermi energy of an n-typesemiconductor device towards a conduction band of silicon in asilicon-containing substrate of the n-type semiconductor device. The“conduction band” is the lowest lying electron energy band of the dopedmaterial that is not completely filled with electrons. In oneembodiment, the work function of the n-type work function metal layerranges from 4.1 eV to 4.3 eV. In one embodiment, the n-type workfunction metal layer is composed of at least one of TiAl, TaN, TiN, HfN,HfSi, or combinations thereof.

In some embodiments, the second gate metal layer 30, e.g., n-type workfunction metal layer, may be deposited using atomic layer deposition(ALD). The second gate metal layer 30, e.g., n-type work function metallayer, can be deposited using chemical vapor deposition (CVD), physicalvapor deposition (PVD), plating or a combination thereof.

In some embodiments, the second gate metal layer 30 may have a thicknessranging from about 1.0 nm to about 6.0 nm.

In some embodiments, the method may include the step of removing thesecond gate metal layer 30 from the channel region of the nanosheets 10in the first stack 11 a. This can be accomplished by forming a blockmask over the second stack 11 b of nanosheets 10, followed by removingthe second gate metal layer 30 from being present over the first stack11 a of nanosheets 10 using a selective etch process. This step isoptional, and is not depicted in the process flow illustrated by FIGS.5-11.

Referring to FIG. 5, in a following step 11, the method may continuewith depositing a gate electrode material layer 40, and patterning thestack of the gate electrode material 40, the second gate metal layer 30,and the first gate metal layer 20. The stack of the gate electrodematerial 40, the second gate metal layer 30, and the first gate metallayer 20 may be patterned to provide a first gate structure to thep-type nanosheet device employing the nanosheets 10 of the first stack11 a, and a second gate structure to the n-type nanosheet deviceemploying the nanosheets 10 of the second stack 11 b. The at least onegate electrode material 40 may comprise a doped semiconductor, such asn-type polysilicon, or an elemental metal (e.g., tungsten, titanium,tantalum, aluminum, nickel, ruthenium, palladium and platinum), an alloyof at least one elemental metal, an elemental metal nitride (e.g.,tungsten nitride, aluminum nitride, and titanium nitride), an elementalmetal silicide (e.g., tungsten silicide, nickel silicide, and titaniumsilicide) and multilayered combinations thereof. The at least one gateelectrode material layer 40 can be formed utilizing a deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD),sputtering, atomic layer deposition (ALD) and other like depositionprocesses.

Following deposition of the gate electrode material layer 40,photolithography and etch processes are used to pattern the structure toprovide a first gate structure composed of a first portion of the gateelectrode material layer 40, the second gate metal layer 30, the firstgate metal layer 20, the etch stop layer 25, and the gate dielectric 15to the p-type nanosheet device employing the nanosheets 10 of the firststack 11 a; and to provide a second gate structure composed of a secondportion of the gate electrode material layer 40 to the n-type nanosheetdevice employing the nanosheets 10 of the second stack 11 b, the secondmetal gate layer 30 and the gate dielectric 15.

Having described preferred embodiments of a methods and structuresdisclosed herein, it is noted that modifications and variations can bemade by persons skilled in the art in light of the above teachings. Itis therefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

What is claimed is:
 1. A method for a device comprising: forming atleast two stacks of nanosheets, wherein each nanosheet in each of saidat least two stacks of nanosheets; and forming a metal layer scheme oneach nanosheet, the metal layer scheme comprising at least an etch stoplayer of a first composition and a work function adjusting layer of asecond composition, wherein the etch stop layer has a composition thatprovides that the work function adjusting layer is removable by a wetetch chemistry, wherein the etch stop layer is removed from one of theat least two stacks of nanosheets.
 2. The method of claim 1, wherein theetch stop layer comprises a first metal nitride.
 3. The method of claim1, wherein the work function adjusting layer comprises a second metalnitride.
 4. The method of claim 2, wherein the first metal nitride iscomprised of tantalum nitride.
 5. The method of claim 3, wherein thework function adjusting layer is a p-type work function adjusting layer.6. The method of claim 5, wherein the p-type work function adjustinglayer comprises titanium nitride.
 7. A method for producing nanosheetsemiconductor devices comprising: forming a first stack of suspendednanosheets on a first region of a substrate and a second stack ofsuspended nanosheets on a second region of the substrate; forming ametal layer scheme on each nanosheet, the metal layer scheme comprisingan etch stop layer of a first composition and a work function adjustinglayer of a second composition, wherein the etch stop layer has acomposition that provides that the work function adjusting layer isremovable by a wet etch chemistry that is selective to the etch stoplayer; and removing the work function adjusting layer from the secondstack of suspended nanosheets in the second region of the substrate,while the work function adjusting layer remains on the first stack ofsuspended nanosheets, the work function adjusting layer is removed fromthe second stack of suspended nanosheets by a wet chemical etch that isselective to the etch stop layer, wherein the etch stop layer is removedfrom the second stack of suspended nanosheets.
 8. The method of claim 7,wherein the etch stop layer comprises tantalum nitride.
 9. The method ofclaim 7, wherein the work function adjusting layer comprises titaniumnitride.
 10. The method of claim 9, wherein the work function adjustinglayer is a p-type work function adjusting layer.
 11. The method of claim10, further comprising forming an n-type work function adjusting layeron the second stack of suspended nanosheets.
 12. The method of claim 11,further comprising forming a gate conductor layer over each of the firstand second stacks of suspended nanowires.
 13. The method of claim 12,further comprising patterning the gate conductive layer, and the n-typework function adjusting layer to provide a first gate structure to thefirst stack of suspended nanosheets.
 14. The method of claim 12, furthercomprising patterning the gate conductive layer, and the p-type workfunction adjusting layer to provide a second gate structure to thesecond stack of suspended nanosheets.
 15. An electrical devicecomprising: a first stack of suspended nanosheets in a first region of asubstrate containing first conductivity type nanosheet devices, and asecond stack of suspended nanosheets in a second region of the substrateincluding second conductivity type nanosheet devices; an etch stop layeris present on the gate dielectric of said first stack of suspendednanosheets, the etch stop layer having a composition selected from thegroup consisting of tantalum nitride, aluminum oxide, lanthanum oxideand combinations thereof, wherein the etch stop layer is not present inthe second stack of suspended nanosheets in the second region of thesubstrate; and a work function adjusting metal containing layer ispresent on the etch stop layer.
 16. The electrical device of claim 15,wherein the first work function adjusting metal containing layer iscomprised of titanium nitride.
 17. The electrical device of claim 16,wherein the first work function adjusting metal containing layer is ap-type work function adjusting layer.
 18. The electrical device of claim17, wherein the second work function adjusting metal containing layer isan n-type work function adjusting layer.
 19. The electrical device ofclaim 17, wherein the etch stop layer comprises tantalum nitride. 20.The electrical device of claim 17, wherein the work function adjustinglayer comprises titanium nitride.